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Micro cantilevers

for AC (dynamic) mode AFM

[ OMCL-AC series ]

True atomic resolution with Tetra tip

defect in silicon (111) surface defect in silicon (111) surface
Non contact UHV-AFM images of single crystal silicon, (111) plane
Scan area: 30nm x 30nm (Left), 9.8nm x 9.8nm (Right)
(Pictures : Courtesy of Prof.Morita, Hiroshima Univ. Japan (1995))
(Present address : Osaka Univ. Japan)



Several defects are clearly observed.
This means the images above have true atomic-scale lateral resolution.
If a dull tip is used, such clear lattice defects can not be obtained even in ultra high vacuum.


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